Design of a normally-off diamond JFET for high power integrated applications
نویسندگان
چکیده
منابع مشابه
Design of 1.7 to 14kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
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ژورنال
عنوان ژورنال: Diamond and Related Materials
سال: 2017
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2017.08.003